David Kotecki

David Kotecki
Nationality	American
Occupation	Electrical engineer, academic
Known for	Dielectric materials for DRAM capacitors
Alma mater	University of Dayton; University of California, Davis

David Kotecki is an American electrical engineer and Associate Professor of Electrical and Computer Engineering at the University of Maine. He is known for his research on high-dielectric-constant materials, including (Ba,Sr)TiO3 thin films, for use in stacked-capacitor DRAM devices.

Education

Kotecki received a Bachelor of Electrical Engineering degree from the University of Dayton, where he studied from 1977 to 1981. He then attended the University of California, Davis, earning a Master of Science in Engineering Applied Science from 1981 to 1984, followed by a PhD in Engineering Applied Science from 1984 to 1988, also at the University of California, Davis.

Career

Kotecki worked at Goddard Space Flight Center from 1978 to 1980 and at Lawrence Livermore National Laboratory from 1981 to 1988. From 1988 to 1999, he worked at IBM's Semiconductor Research and Development Center, holding the positions of Engineer, Advisory Engineer, and Senior Engineer. In 1999, he joined the University of Maine as an Associate Professor of Electrical and Computer Engineering. He has also served as a Patent Agent and Consultant at Blue Hill Innovation.

Research

According to Semantic Scholar, Kotecki has authored 72 papers that have collectively been cited 1,186 times, giving him an h-index of 18. His most cited work, published in the IBM Journal of Research and Development in 1999, examined (Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM and has been cited 195 times. Other frequently cited studies addressed dielectric relaxation of Ba0.7Sr0.3TiO3 thin films, high dielectric materials for DRAM capacitors, and compensation doping of Ba0.7Sr0.3TiO3 thin films.

His later work extended into high-frequency circuit design, including direct digital synthesizers operating at clock frequencies of 13 GHz and 32 GHz using InP DHBT technology, published in IEEE journals. He also contributed to work on nanopore devices with transverse nanoelectrodes for electrical characterization and sequencing of DNA, presented at the TRANSDUCERS 2007 conference.

According to National Science Foundation records, Kotecki received an NSF grant of $200,000 for a project titled "Electrical Characterization and Testing of Microelectronic Materials, Devices, and Circuits" at the University of Maine, awarded on December 28, 2000.

Selected publications

• "(Ba, Sr)TiO3 dielectrics for future stacked-capacitor DRAM" (1999), IBM Journal of Research and Development
• "Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz" (1998)
• "A review of high dielectric materials for DRAM capacitors" (1997)
• "Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology" (2006), IEEE Journal of Solid-State Circuits
• "Nanopore with Transverse Nanoelectrodes for Electrical Characterization and Sequencing of DNA" (2007), TRANSDUCERS 2007
• "Compensation doping of Ba0.7Sr0.3TiO3 thin films" (1998)
• "Direct digital synthesizer with ROM-Less architecture at 13-GHz clock frequency in InP DHBT technology" (2006), IEEE Microwave and Wireless Components Letters
• "Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors" (1999)
• "Hydrogen incorporation in silicon nitride films deposited by remote electron-cyclotron-resonance chemical vapor deposition" (1995)
• "Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers" (2000)

External links

• David Kotecki on ORCID